Performance of Geant4 in simulating semiconductor particle detector response in the energy range below1MeV

摘要

Geant4 simulations play a crucial role in the analysis and interpretation of experiments providinglow energy precision tests of the Standard Model. This paper focuses on the accuracy of thedescription of the electron processes in the energy range between 100 and 1000 keV. The effect ofthe different simulation parameters and multiple scattering models on the backscattering coefficientsis investigated. Simulations of the response of HPGe and passivated implanted planar Si detectorsto beta particles are compared to experimental results. An overall good agreement is found betweenGeant4 simulations and experimental data.